inchange semiconductor isc product specification isc silicon npn power transistor 2SC2518 description high collector-emitter sustaining voltage- : v ceo(sus) = 400v(min) low collector saturation voltage high speed switching applications designed for switching regulator, dc-dc converter and ultrasonic applic ance applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 500 v v ceo collector-emitter voltage 400 v v ebo emitter-base voltage 8 v i c collector current-continuous 5 a i cm collector current-peak 10 a i b b base current-continuous 2.5 a p c total power dissipation @ t c =25 40 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC2518 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v ceo(sus) collector-emitter sustaining voltage i c = 2a; i b = 0.4a, l=1mh b 400 v v cex(sus)-1 collector-emitter sustaining voltage i c = 2a ; i b1 =-i b2 = 0.4a, l=180 h,clamped 450 v v cex(sus)-2 collector-emitter sustaining voltage i c = 4a; i b1 = 0.8a; i b2 = -0.4a, l= 180 h,clamped 400 v v ce (sat) collector-emitter saturation voltage i c = 2a; i b = 0.4a b 1.0 v v be (sat) base-emitter saturation voltage i c = 2a; i b = 0.4a b 1.5 v i cbo collector cutoff current v cb = 400v; i e = 0 10 a i cer collector cutoff current v ce = 400v; r be = 51 , t a =125 1.0 ma i cex collector cutoff current v ce = 400v; v be(off) = -1.5v v ce = 400v; v be(off) = -1.5v, t a =125 10 1.0 a ma i ebo emitter cutoff current v eb = 5v; i c =0 10 a h fe-1 dc current gain i c = 0.5a; v ce = 5v 20 80 h fe-2 dc current gain i c = 2a; v ce = 5v 10 switching times t on turn-on time 1.0 s t stg storage time 2.5 s t f fall time i c = 2a ,r l = 75 , i b1 = -i b2 = 0.4a,v cc 150v 0.7 s ? h fe- 2 classifications m l k 20-40 30-60 40-80 isc website www.iscsemi.cn 2
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